JOURNAL OF SHANDONG UNIVERSITY (ENGINEERING SCIENCE)

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Preparation and characterization of lowdimensional GaN nanostructues

LV Wei, WU Li-li, ZOU Ke, WU You-shi   

  1. School of Materials Science and Engineering, Shandong University, Jinan 250061, China
  • Received:2006-09-13 Revised:1900-01-01 Online:2007-02-24 Published:2007-02-24
  • Contact: LV Wei

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Abstract: GaN nanowires and nanobelts were synthesized via the vaporphasedeposition method with GaN as initiating reagents. The products were characterized by XRD, SEM and HRTEM. The influence of different technological parameters to the morphology of GAN was studied. The Raman spectra of GaN nanowires and nanobelts were also analyzed.

Key words: lowdimensional nanostructues, characterization , gallium nitride

CLC Number: 

  • O611
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