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Study on the transformation activation energy in InN semiconductor nanocrystals

WANG Jian-ping1, WANG Shu-hua2, GENG Gui-li3   

  1. 1. Engineering Department, Shandong Business VocationalTechnical School, Jinan 250103, China;2. College of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, China;3. School of Materials Science and Engineering
  • Received:2007-12-05 Revised:1900-01-01 Online:2008-04-16 Published:2008-04-16
  • Contact: WANG Jian-ping

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Abstract: The relationship between transformation activation energy E, heating rate Φ and peak temperature Tp was induced. The characteristic parameter Tp was studied during the process of changing from the room temperature cubic phase to the high temperature hexagonal phase in InN semiconductor nanocrystals by differential scanning calorimetry at different heating rates. According to the induced expression and experimental data,the calculated transformation activation energy is E=1.3466×103kJ／mol.

Key words: InN semiconductor nanocrystals, differential scanning calorimetry, transformation, activation energy

CLC Number: 

  • TB94
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