关键词: 太阳能电池, InGaN, 辐照损伤, 光致发光, Fermi能级

Abstract: It is shown that the energy gap of In1-xGaxN alloys can be continuously varied from 0.7 to 3.4eV, which can make it possible for multi-junction solar cells materials to provide a full-sola-spectrum material system. It is found that the electronic properties of these alloys exhibit a much higher resistance to high-energy(2MeV)proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard solar cells. The observed insensitivity of the semiconductor characteristics to the radiation damage was explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in In1-xGaxN alloys.

Key words: solar cells, InGaN, irradiation damage, photoluminescence, fermi levels