La2／3Sr1／3MnO3单晶的本征低温电阻最小行为研究（英文）

山东大学学报(工学版)

La_2／3Sr_1／3MnO₃单晶的本征低温电阻最小行为研究（英文）

贾蓉蓉, 张金仓, 冯振杰, 王仕鹏, 陈昌兆, 敬超, 曹世勋

上海大学理学院物理系，上海 200444

收稿日期:2009-01-06 修回日期:1900-01-01 出版日期:2009-02-16 发布日期:2009-02-16

Direct evidence of extrinsic behavior for lowtemperature resistivity minimum from colossal magnetoresistance La2／3Sr1／3MnO3 single crystal

JIA Rongrong, ZHANG Jincang*, FENG Zhenjie, WANG Shipeng, CHEN Changzhao, JING Chao, CAO Shixun

Department of Physics, Shanghai University, Shanghai 200444, China

Received:2009-01-06 Revised:1900-01-01 Online:2009-02-16 Published:2009-02-16
Contact: JIA Rongrong

摘要/Abstract

摘要： 摘要：为了阐明在锰氧化物多晶以及外延薄膜中存在的低温电阻极小值现象,对La2／3Sr1／3MnO3单晶样品的性质进行研究.该单晶样品是利用光学浮区生长炉,在氩气气氛中生长出的高品质晶体,系统研究了退火对La2／3Sr1／3MnO3单晶低温输运行为的影响.结果表明,在退火前样品存在的低温电阻极小值无论是c轴还是ab平面在退火后均消失,这一结果首次证明了在锰氧化物体系中存在的低温电阻极小是一种非本征的物理行为,与实验样品的制备工艺和存在于其中的非完整性具有较强的依赖性,并进一步证明自旋无序散射乃是传统体系出现低温电阻极小的主要原因.

关键词: 庞磁电阻, 电阻极小, 退火, 单晶

Abstract: Abstract: In order to clarify the physical mechanism of the lowtemperature resistivity minimum observed in polycrystal and epitaxy films of manganites, the single crystal La2／3Sr1／3MnO3 were studied, which were fabricated in Ar atmosphere by opticalfloatingzone method. The transmission electron microscopy and the temperature dependence of resistivity were measured before and after annealing. The physical properties of the single crystal were markedly influenced by annealing treatment. The most interesting of all is the resistivity minimum at low temperature vanished after annealing treatment both along the c axis and ab plane. Consequently, it is reasonable that the lowtemperature resistivity minimum is an extrinsic phenomenon, which is caused from spin disorder scattering.

Key words: colossal magnetoresistance, resistivity minimum, annealing, single crystal

中图分类号:

O469

贾蓉蓉, 张金仓, 冯振杰, 王仕鹏, 陈昌兆, 敬超, 曹世勋. La_2／3Sr_1／3MnO₃单晶的本征低温电阻最小行为研究（英文）[J]. 山东大学学报(工学版), 2009, 39(1): 110-113.

JIA Rongrong, ZHANG Jincang*, FENG Zhenjie, WANG Shipeng, CHEN Changzhao, JING Chao, CAO Shixun. Direct evidence of extrinsic behavior for lowtemperature resistivity minimum from colossal magnetoresistance La2／3Sr1／3MnO3 single crystal[J]. JOURNAL OF SHANDONG UNIVERSITY (ENGINEERING SCIENCE), 2009, 39(1): 110-113.

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La_2／3Sr_1／3MnO₃单晶的本征低温电阻最小行为研究（英文）

Direct evidence of extrinsic behavior for lowtemperature resistivity minimum from colossal magnetoresistance La2／3Sr1／3MnO3 single crystal

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