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反应动力学理论和n型金属氧化物EF的变化范围

袁庆华1,刘晓健2,李蕾1,裘南畹1   

  1. 1.山东大学物理与微电子学院,山东济南250061;2. 济南半导体研究所,山东济南250011
  • 收稿日期:2004-12-07 修回日期:1900-01-01 出版日期:2006-08-24 发布日期:2006-08-24
  • 通讯作者: 袁庆华

The reaction kinetics theory and the EF variation range of ntype metal oxide

YUAN Qinghua1,LIU Xiaojian2,LI Lei1,QIU Nanyuan1   

  1. 1.School of Physics and Microelectronics,Shandong University,Jinan 250061,China;2. Institute of Semiconductor of Jinan,Jinan 250011,China
  • Received:2004-12-07 Revised:1900-01-01 Online:2006-08-24 Published:2006-08-24
  • Contact: YUAN Qinghua

摘要: 首先,提出了一种用化学反应动力学来研究半导体点缺陷浓度统计分布的理论;其次,用这个理论来研究了有2次施主能级的n型金属氧化物费米能级EF,给出EF的下限EFm为Ed2-RTln2; 第三,用泊松方程的解和电中性方程来估算费米能级,得出EF的上限EFM为Ed1-RTln2.

关键词: 反应动力学, Fermi能级, 点缺陷

Abstract: Firstly, a theory to study the statistical distribution of concentration of semiconductor pointdefects is presented by means of reactionkinetics; Sencondly, by using this theory, the Fermi level EF of the ntype oxide with two donor levels is studied, and the lower limit EFm is given by Ed2-RTln2; Thirdly, the upper limit EFm is estimated by the solution of Poisson's equation and neutral equation, and gives EFM=Ed1-RTln2.

Key words: Fermi level, point defect , reaction kinetics

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