新型金属氧化物薄膜气敏元件基材料的开发

田芳1,张颖欣2,张礼3,侯秀萍3,裘南畹3

1. School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China;
2. Jinan Semiconduction Institution, Jinan 250100, China;
3. School of Physics, Shandong University, Jinan 250100, China

Received:2009-01-09 Revised:1900-01-01 Online:2009-04-16 Published:2009-04-16

摘要：

根据电导气敏机理的氧负离子理论,提出制备n型金属氧化物气敏基材料的理论,指出禁带宽度Eg＞2eV的金属氧化物材料都有可能研制薄膜气敏元件,并通过Fe2O3／1％Sb2O3和TiO2薄膜元件的制备和表征,论证了该理论的正确性.

关键词: 金属氧化物;薄膜气敏元件;基材料')">金属氧化物;薄膜气敏元件;基材料

Key words: metal oxide; thin film gas sensor; basic material')">metal oxide; thin film gas sensor; basic material

中图分类号:

田芳1,张颖欣2,张礼3,侯秀萍3,裘南畹3. 新型金属氧化物薄膜气敏元件基材料的开发[J]. 山东大学学报(工学版), 2009, 39(2): 104-107.

Viewed

Full text

Abstract

Cited

Shared

Discussed

PDF (PC)