InN半导体纳米晶相变活化能的研究

山东大学学报(工学版)

InN半导体纳米晶相变活化能的研究

王建平¹, 王淑华², 耿贵立³

1. 山东商业职业技术学院工程技术系, 山东济南 250103; 2. 山东建筑大学机电学院, 山东济南 250101;3. 山东大学材料科学与工程学院, 山东济南 250061

收稿日期:2007-12-05 修回日期:1900-01-01 出版日期:2008-04-16 发布日期:2008-04-16
通讯作者: 王建平

Study on the transformation activation energy in InN semiconductor nanocrystals

WANG Jian-ping¹, WANG Shu-hua², GENG Gui-li³

1. Engineering Department, Shandong Business VocationalTechnical School, Jinan 250103, China;2. College of Mechanical and Electronic Engineering, Shandong Jianzhu University, Jinan 250101, China;3. School of Materials Science and Engineering

Received:2007-12-05 Revised:1900-01-01 Online:2008-04-16 Published:2008-04-16
Contact: WANG Jian-ping

摘要/Abstract

摘要： 导出了相变活化能E与加热速率Φ和峰值温度Tp的关系表达式.用差示扫描量热分析法,研究了InN半导体纳米晶在不同加热速率条件下由室温立方相向高温六方相转变的特征参数Tp.然后根据导出的关系表达式和实验数据,计算所得的InN半导体纳米晶由立方相转变为六方相的相变活化能为E=1.3466×103kJ／mol.

关键词: InN半导体纳米晶, 差示扫描量热法, 相变, 活化能

Abstract: The relationship between transformation activation energy E, heating rate Φ and peak temperature T_pwas induced. The characteristic parameter T_p was studied during the process of changing from the room temperature cubic phase to the high temperature hexagonal phase in InN semiconductor nanocrystals by differential scanning calorimetry at different heating rates. According to the induced expression and experimental data,the calculated transformation activation energy is E=1.3466×103kJ／mol.

Key words: InN semiconductor nanocrystals, differential scanning calorimetry, transformation, activation energy

中图分类号:

TB94

王建平,王淑华,耿贵立 . InN半导体纳米晶相变活化能的研究[J]. 山东大学学报(工学版), 2008, 38(2): 42-44 .

WANG Jian-ping,WANG Shu-hua,GENG Gui-li . Study on the transformation activation energy in InN semiconductor nanocrystals[J]. JOURNAL OF SHANDONG UNIVERSITY (ENGINEERING SCIENCE), 2008, 38(2): 42-44 .

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